Adsorption of CO, O₂, and H₂O on GaAs(100): photoreflectance studiesSEEBAUER, E. G.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1989, Vol 7, Num 6, pp 3279-3286, issn 0734-2101Article

Quantitative extraction of continuous distributions of energy states and pre-exponential factors from thermal desorption spectraSEEBAUER, E. G.Surface science. 1994, Vol 316, Num 3, pp 391-405, issn 0039-6028Article

Oxidation and annealing of GaAs (100) studied by photoreflectanceSEEBAUER, E. G.Journal of applied physics. 1989, Vol 66, Num 10, pp 4963-4972, issn 0021-8979Article

Photooxidation of ethanol on Fe-Ti oxide particulatesIDRISS, H; SEEBAUER, E. G.Langmuir. 1998, Vol 14, Num 21, pp 6146-6150, issn 0743-7463Article

Fixing hidden problems with thermal budgetSEEBAUER, E. G; DITCHFIELD, R.Solid state technology. 1997, Vol 40, Num 10, pp 111-120, issn 0038-111X, 6 p.Article

Reactions of ethanol over metal oxidesIDRISS, H; SEEBAUER, E. G.Journal of molecular catalysis. A, Chemical. 2000, Vol 152, Num 1-2, pp 201-212, issn 1381-1169Article

Rapid thermal processing : Fixing problems with the concept of thermal budgetDITCHFIELD, R; SEEBAUER, E. G.Journal of the Electrochemical Society. 1997, Vol 144, Num 5, pp 1842-1849, issn 0013-4651Article

Estimating pre-exponential factors for desorption from semiconductors : consequences for a priori process modelingWANG, Z; SEEBAUER, E. G.Applied surface science. 2001, Vol 181, Num 1-2, pp 111-120, issn 0169-4332Article

Band bending at the Si(1 1 1)-SiO₂ interface induced by low-energy ion bombardmentDEV, Kapil; SEEBAUER, E. G.Surface science. 2004, Vol 550, Num 1-3, pp 185-191, issn 0039-6028, 7 p.Article

Band bending at the Si(100)-Si₃N₄ interface studied by photoreflectance spectroscopyDEV, Kapil; SEEBAUER, E. G.Surface science. 2005, Vol 583, Num 1, pp 80-87, issn 0039-6028, 8 p.Article

Temperature-dependent energy thresholds for ion-stimulated defect formation in solidsWANG, Z; SEEBAUER, E. G.Physical review letters. 2005, Vol 95, Num 1, pp 015501.1-015501.4, issn 0031-9007Article

Vacancy charging on Si(1 1 1)-(7 × 7) investigated by density functional theoryDEV, Kapil; SEEBAUER, E. G.Surface science. 2003, Vol 538, Num 3, pp L495-L499, issn 0039-6028Article

Effect of oxygen electronic polarisability on catalytic reactions over oxidesIDRISS, H; SEEBAUER, E. G.Catalysis letters. 2000, Vol 66, Num 3, pp 139-145, issn 1011-372XArticle

Vacancy charging on Si(111)-1 x 1 investigated by density functional theoryDEV, Kapil; SEEBAUER, E. G.Surface science. 2004, Vol 572, Num 2-3, pp 483-489, issn 0039-6028, 7 p.Article

Surface self diffusion at high temperatures : new simulational insightsSUNI, I. I; SEEBAUER, E. G.Thin solid films. 1996, Vol 272, Num 2, pp 229-234, issn 0040-6090Article

Adsorption of TiCl₄, SiH₄, and HCl and Si(100) : application to TiSi₂ chemical vapor deposition and Si etchingMENDICINO, M. A; SEEBAUER, E. G.Journal of the Electrochemical Society. 1993, Vol 140, Num 6, pp 1786-1793, issn 0013-4651Article

Effects of microreactor geometry on performance : Differences between posted reactors and channel reactorsZHENG NI; SEEBAUER, E. G; MASEL, Richard I et al.Industrial & engineering chemistry research. 2005, Vol 44, Num 12, pp 4267-4271, issn 0888-5885, 5 p.Article

Structure and mobility on amorphous silicon surfacesDALTON, A. S; SEEBAUER, E. G.Surface science. 2004, Vol 550, Num 1-3, pp 140-148, issn 0039-6028, 9 p.Article

Kinetics of salicide contact formation for thin-film SOI transistorsMENDICINO, M. A; SEEBAUER, E. G.Journal of the Electrochemical Society. 1995, Vol 142, Num 2, pp L28-L30, issn 0013-4651Article

Detailed in-situ monitoring of film growth : application to TiSi₂ chemical vapor depositionMENDICINO, M. A; SEEBAUER, E. G.Journal of crystal growth. 1993, Vol 134, Num 3-4, pp 377-385, issn 0022-0248Article

Accurate methods for simulating electroreflectance and photoreflectance spectra of GaAsJACKSON, P. L; SEEBAUER, E. G.Journal of applied physics. 1991, Vol 69, Num 2, pp 943-948, issn 0021-8979, 6 p.Article

An improved theory for temperature-dependent Arrhenius parameters in mesoscale surface diffusionDALTON, A. S; SEEBAUER, E. G.Surface science. 2007, Vol 601, Num 3, pp 728-734, issn 0039-6028, 7 p.Article

Adsorption of chlorine on TiSi₂ : application to etching and deposition of silicide filmsDITCHFIELD, R; MENDICINO, M. A; SEEBAUER, E. G et al.Journal of the Electrochemical Society. 1996, Vol 143, Num 1, pp 266-271, issn 0013-4651Article

Surface diffusion of Sb and Ge(111) monitored quantitatively with optical second harmonic microscopySCHULTZ, K. A; SEEBAUER, E. G.The Journal of chemical physics. 1992, Vol 97, Num 9, pp 6958-6967, issn 0021-9606Article

Practical processing issues in titanium silicide CVDSOUTHWELL, R. P; SEEBAUER, E. G.Applied surface science. 1997, Vol 119, Num 1-2, pp 41-49, issn 0169-4332Article